Vishay TrenchFET Type N-Channel MOSFET, 36 A, 40 V Enhancement, 8-Pin SOIC SI4154DY-T1-GE3

RS-artikelnummer:: 180-7965
Tillv. art.nr:: SI4154DY-T1-GE3
Tillverkare / varumärke:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 36 A, 40 V Enhancement, 8-Pin SOIC SI4154DY-T1-GE3

Mängdrabatt möjlig

Antal (1 förpackning med 10 enheter)*

78,18 kr

(exkl. moms)

97,72 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Sista RS lager

Slutlig(a) 3 410 enhet(er), redo att levereras

Enheter	Per enhet	Per förpackning*
10 - 90	7,818 kr	78,18 kr
100 - 240	7,605 kr	76,05 kr
250 - 490	7,403 kr	74,03 kr
500 - 990	7,213 kr	72,13 kr
1000 +	7,045 kr	70,45 kr

*vägledande pris

RS-artikelnummer:: 180-7965
Tillv. art.nr:: SI4154DY-T1-GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SOIC
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.9mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.1V
	Typical Gate Charge Qg @ Vgs	32.5nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	5W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 40V
	Package Type SOIC
	Series TrenchFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.9mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.1V
	Typical Gate Charge Qg @ Vgs 32.5nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 5W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 3.3mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 7.8W and continuous drain current of 36A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• POL

• Synchronous rectifier

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21