Vishay TrenchFET Type N-Channel MOSFET, 10.9 A, 30 V Enhancement, 8-Pin SOIC SI4128DY-T1-GE3
- RS-artikelnummer:
- 710-3311
- Tillv. art.nr:
- SI4128DY-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
42,90 kr
(exkl. moms)
53,60 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 130 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 8,58 kr | 42,90 kr |
| 50 - 245 | 8,064 kr | 40,32 kr |
| 250 - 495 | 7,28 kr | 36,40 kr |
| 500 - 1245 | 6,876 kr | 34,38 kr |
| 1250 + | 6,428 kr | 32,14 kr |
*vägledande pris
- RS-artikelnummer:
- 710-3311
- Tillv. art.nr:
- SI4128DY-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10.9A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.03Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.8nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 5W | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Standards/Approvals | IEC 61249-2-21 | |
| Width | 4 mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10.9A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.03Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.8nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 5W | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Standards/Approvals IEC 61249-2-21 | ||
Width 4 mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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