Vishay TrenchFET Type N-Channel MOSFET, 36 A, 40 V Enhancement, 8-Pin SOIC

RS-artikelnummer:: 180-7284
Tillv. art.nr:: SI4154DY-T1-GE3
Tillverkare / varumärke:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 36 A, 40 V Enhancement, 8-Pin SOIC

Antal (1 rulle med 2500 enheter)*

17 615,00 kr

(exkl. moms)

22 020,00 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Sista RS lager

Slutlig(a) 2 500 enhet(er), redo att levereras

Enheter	Per enhet	Per rulle*
2500 +	7,046 kr	17 615,00 kr

*vägledande pris

RS-artikelnummer:: 180-7284
Tillv. art.nr:: SI4154DY-T1-GE3
Tillverkare / varumärke:: Vishay

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	36A
	Maximum Drain Source Voltage Vds	40V
	Series	TrenchFET
	Package Type	SOIC
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.9mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	5W
	Typical Gate Charge Qg @ Vgs	32.5nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Automotive Standard	No

	Välj alla
	Brand Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 36A
	Maximum Drain Source Voltage Vds 40V
	Series TrenchFET
	Package Type SOIC
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.9mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 5W
	Typical Gate Charge Qg @ Vgs 32.5nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 3.3mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 7.8W and continuous drain current of 36A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• POL

• Synchronous rectifier

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21