Vishay Siliconix Dual TrenchFET 2 Type N-Channel Power MOSFET, 30 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3

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80,53 kr

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100,66 kr

(inkl. moms)

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Förpackningsalternativ:
RS-artikelnummer:
178-3932P
Tillv. art.nr:
SiZ348DT-T1-GE3
Tillverkare / varumärke:
Vishay Siliconix
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Brand

Vishay Siliconix

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAIR 3 x 3

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

10mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

150°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

16.7W

Typical Gate Charge Qg @ Vgs

12.1nC

Maximum Operating Temperature

-55°C

Transistor Configuration

Dual

Width

3 mm

Length

3mm

Standards/Approvals

No

Height

0.75mm

Number of Elements per Chip

2

Automotive Standard

No

RoHS-status: Undantagen

TrenchFET® Gen IV power MOSFET

High side and low side MOSFETs form optimized combination for 50 % duty cycle

Optimized RDS - Qg and RDS - Qgd FOM elevates efficiency for high frequency switching

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