Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 258 A, 30 V Enhancement, 8-Pin PowerPAIR 6 x 5F SiZF928DT-T1-GE3
- RS-artikelnummer:
- 228-2943
- Tillv. art.nr:
- SiZF928DT-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
107,97 kr
(exkl. moms)
134,96 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 12 650 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 21,594 kr | 107,97 kr |
| 50 - 120 | 20,294 kr | 101,47 kr |
| 125 - 245 | 18,368 kr | 91,84 kr |
| 250 - 495 | 17,292 kr | 86,46 kr |
| 500 + | 16,218 kr | 81,09 kr |
*vägledande pris
- RS-artikelnummer:
- 228-2943
- Tillv. art.nr:
- SiZF928DT-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 258A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | PowerPAIR 6 x 5F | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00245Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 18.5nC | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 74W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 258A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type PowerPAIR 6 x 5F | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00245Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 18.5nC | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 74W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Dual N-Channel 30 V MOSFET.
100 % Rg and UIS tested
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