Vishay Dual TrenchFET 2 Type N-Channel MOSFET, 69.3 A, 30 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- RS-artikelnummer:
- 228-2938
- Tillv. art.nr:
- SiZ340BDT-T1-GE3
- Tillverkare / varumärke:
- Vishay
Antal (1 rulle med 3000 enheter)*
7 257,00 kr
(exkl. moms)
9 072,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 3 000 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 + | 2,419 kr | 7 257,00 kr |
*vägledande pris
- RS-artikelnummer:
- 228-2938
- Tillv. art.nr:
- SiZ340BDT-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 69.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | TrenchFET | |
| Package Type | PowerPAIR 3 x 3S | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00856Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 31W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.4nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 69.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series TrenchFET | ||
Package Type PowerPAIR 3 x 3S | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00856Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 31W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.4nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Vishay Dual N-Channel 30-V (D-S) MOSFET.
100 % Rg and UIS tested
relaterade länkar
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ340BDT-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ254DT-T1-GE3
- Vishay Dual TrenchFET 2 Type N-Channel MOSFET 70 V Enhancement, 8-Pin PowerPAIR 3 x 3S SIZ256DT-T1-GE3
- Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAIR 3 x 3S
- Vishay Dual TrenchFET Gen IV 2 Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAIR 3 x 3S SiZ240DT-T1-GE3
- Vishay Siliconix Dual TrenchFET 2 Type N-Channel Power MOSFET 30 V Enhancement, 8-Pin PowerPAIR 3 x 3
