Infineon OptiMOS Type N-Channel MOSFET, 300 A, 30 V Enhancement, 9-Pin HSOF IPT004N03LATMA1

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82,16 kr

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RS-artikelnummer:
130-0929
Tillv. art.nr:
IPT004N03LATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

300A

Maximum Drain Source Voltage Vds

30V

Series

OptiMOS

Package Type

HSOF

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

500μΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

252nC

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

10.1mm

Width

10.58 mm

Height

2.4mm

Automotive Standard

No

Infineon OptiMOS™ Power MOSFET Family


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode

Automotive AEC Q101 qualified

MSL1 up to 260°C Peak reflow

175°C operating temperature

Green package (lead free)

Ultra low Rds(on)

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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