ROHM RD3E08BBJHRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) RD3E08BBJHRBTL

RS-artikelnummer:: 687-362
Tillv. art.nr:: RD3E08BBJHRBTL
Tillverkare / varumärke:: ROHM

ROHM RD3E08BBJHRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) RD3E08BBJHRBTL

Mängdrabatt möjlig

Antal (1 längd med 2 enheter)*

36,16 kr

(exkl. moms)

45,20 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

Dessutom levereras 100 enhet(er) från den 19 januari 2026

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Enheter	Per enhet	Per Längd*
2 - 18	18,08 kr	36,16 kr
20 - 48	15,915 kr	31,83 kr
50 - 198	14,28 kr	28,56 kr
200 - 998	11,53 kr	23,06 kr
1000 +	11,265 kr	22,53 kr

*vägledande pris

RS-artikelnummer:: 687-362
Tillv. art.nr:: RD3E08BBJHRBTL
Tillverkare / varumärke:: ROHM

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	ROHM
	Channel Type	Type P
	Product Type	Single MOSFETs
	Maximum Drain Source Voltage Vds	-30V
	Series	RD3E08BBJHRB
	Package Type	TO-252 (TL)
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.7mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	150nC
	Maximum Gate Source Voltage Vgs	5 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	142W
	Maximum Operating Temperature	175°C
	Height	2.3mm
	Length	10.50mm
	Width	6.8 mm
	Standards/Approvals	AEC-Q101, RoHS
	Automotive Standard	AEC-Q101

	Välj alla
	Brand ROHM
	Channel Type Type P
	Product Type Single MOSFETs
	Maximum Drain Source Voltage Vds -30V
	Series RD3E08BBJHRB
	Package Type TO-252 (TL)
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.7mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 150nC
	Maximum Gate Source Voltage Vgs 5 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 142W
	Maximum Operating Temperature 175°C
	Height 2.3mm
	Length 10.50mm
	Width 6.8 mm
	Standards/Approvals AEC-Q101, RoHS
	Automotive Standard AEC-Q101

Datasheet - RD3E08BBJHRBTL

The ROHM Power MOSFET designed for demanding applications requiring low on-resistance and high current handling capabilities. This robust device operates at a maximum drain-source voltage of -30V and a continuous drain current of ±80A, ensuring efficient performance in power management systems. Its innovative construction includes a thermal resistance of just 1.05 °C/W, optimising reliability and facilitating effective heat dissipation. With AEC-Q101 qualification, this MOSFET is suitable for automotive applications, thriving in environments prone to extreme temperature variations and ensuring dependable operation under challenging conditions.

Delivers low on resistance of 3.7 mΩ, enhancing efficiency and minimising energy loss

Pulsed drain current capability of ±160A, accommodating high-demand applications

Gate-source voltage ratings of +5/-20V ensure versatile operation and robust control

Assemblable in a DPAK package for efficient thermal management and compact footprint

Avalanche tested for improved reliability in high-stress electrical environments

AEC Q101 qualified, making it ideal for safety-critical automotive applications.

ROHM RD3E08BBJHRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) RD3E08BBJHRBTL

GRATIS leverans för online beställningar över 500,00 kr

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