ROHM RD3L08BBJHRB Type P-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08BBJHRBTL

RS-artikelnummer:: 687-358
Tillv. art.nr:: RD3L08BBJHRBTL
Tillverkare / varumärke:: ROHM

ROHM RD3L08BBJHRB Type P-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08BBJHRBTL

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Antal (1 längd med 2 enheter)*

38,51 kr

(exkl. moms)

48,138 kr

(inkl. moms)

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Enheter	Per enhet	Per Längd*
2 - 18	19,255 kr	38,51 kr
20 - 48	16,965 kr	33,93 kr
50 - 198	15,26 kr	30,52 kr
200 - 998	12,25 kr	24,50 kr
1000 +	11,985 kr	23,97 kr

*vägledande pris

RS-artikelnummer:: 687-358
Tillv. art.nr:: RD3L08BBJHRBTL
Tillverkare / varumärke:: ROHM

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type P
	Maximum Drain Source Voltage Vds	60V
	Series	RD3L08BBJHRB
	Package Type	TO-252 (TL)
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	10.7mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	142W
	Maximum Gate Source Voltage Vgs	5 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	145nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, AEC-Q101
	Height	2.3mm
	Width	6.8 mm
	Length	10.50mm
	Automotive Standard	AEC-Q101

	Välj alla
	Brand ROHM
	Product Type Single MOSFETs
	Channel Type Type P
	Maximum Drain Source Voltage Vds 60V
	Series RD3L08BBJHRB
	Package Type TO-252 (TL)
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 10.7mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 142W
	Maximum Gate Source Voltage Vgs 5 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 145nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, AEC-Q101
	Height 2.3mm
	Width 6.8 mm
	Length 10.50mm
	Automotive Standard AEC-Q101

Datasheet - RD3L08BBJHRBTL

The ROHM P channel MOSFET designed for demanding applications requiring robust power management. With a maximum voltage rating of -60V and current capability of ±80A, this device is suitable for automotive and industrial use. Constructed in a TO-252 package, it ensures efficient thermal performance with a power dissipation of up to 142W. The low on-resistance of 10.7mΩ enhances power efficiency, making it an ideal choice for energy-conscious designs. Additionally, it is 100% avalanche tested and AEC-Q101 qualified, ensuring reliability in critical applications.

Optimized for efficiency with low on-state resistance, ensuring reduced power loss

Robust thermal performance allows operation in demanding environments with a maximum junction temperature of 175°C

Suitable for high-current applications with a continuous drain current capability of ±80A

AEC Q101 qualified for automotive applications, ensuring compliance with rigorous quality standards

Embossed tape packaging facilitates automated assembly processes

Fully avalanche rated, guaranteeing reliable operation under transient conditions

Pb free plating and RoHS compliant, meeting environmental standards for modern electronic components

ROHM RD3L08BBJHRB Type P-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08BBJHRBTL

GRATIS leverans för online beställningar över 500,00 kr

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