ROHM RD3N03BAT Type P-Channel Single MOSFETs, 80 V Enhancement, 3-Pin TO-252 (TL) RD3N03BATTL1

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16,38 kr

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20,48 kr

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Förpackningsalternativ:
RS-artikelnummer:
687-384
Tillv. art.nr:
RD3N03BATTL1
Tillverkare / varumärke:
ROHM
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Brand

ROHM

Channel Type

Type P

Product Type

Single MOSFETs

Maximum Drain Source Voltage Vds

80V

Package Type

TO-252 (TL)

Series

RD3N03BAT

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

56mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

50nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

54W

Maximum Operating Temperature

175°C

Height

2.3mm

Length

10.50mm

Width

6.8 mm

Standards/Approvals

AEC-Q101, RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
JP
The ROHM P channel power MOSFET designed to deliver efficient operation in a variety of applications, including motor drives and switching circuits. With a maximum drain-source voltage of -80V and continuous drain current capabilities reaching -30A, this device is engineered for robust performance under demanding conditions. Its low on-resistance of 56mΩ ensures optimal efficiency, minimising energy losses during operation. Additionally, the TO-252 package allows for easy integration into electronic designs, providing versatility and reliability in compact form factors. The RD3N03BAT is also compliant with RoHS and halogen-free standards, making it a suitable choice for environmentally conscious designs.

Low on resistance for improved efficiency and reduced thermal management

High power capability within a compact TO-252 package for versatile application

RoHS and halogen-free compliance ensures environmental safety for modern electronics

Extensive testing, including Rg and UIS, guarantees reliable operation and performance

Wide operating temperature range of -55 to +150 °C supports various environmental conditions

Designed with reliable avalanche energy ratings for enhanced safety during transient conditions

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