ROHM AG502EED3HRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) AG502EED3HRBTL

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47,04 kr

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58,80 kr

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Förpackningsalternativ:
RS-artikelnummer:
687-467
Tillv. art.nr:
AG502EED3HRBTL
Tillverkare / varumärke:
ROHM
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Brand

ROHM

Product Type

Single MOSFETs

Channel Type

Type P

Maximum Drain Source Voltage Vds

-30V

Package Type

TO-252 (TL)

Series

AG502EED3HRB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

8.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

5 V

Typical Gate Charge Qg @ Vgs

52nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

77W

Maximum Operating Temperature

175°C

Height

2.3mm

Length

10.50mm

Width

6.80 mm

Standards/Approvals

AEC-Q101, RoHS

Automotive Standard

AEC-Q101

COO (Country of Origin):
JP
The ROHM Power MOSFET designed for efficient and reliable energy management in automotive systems. Featuring a maximum drain-source voltage of -30V and continuous drain current capability of up to 78A, this device is ideal for demanding applications requiring robust power handling. Its low on-resistance of 8.5mΩ minimises power loss, contributing to enhanced thermal efficiency. Additionally, the MOSFET is qualified under AEC-Q101 standards, ensuring it meets rigorous automotive requirements for durability and performance. With excellent avalanche characteristics and a wide operational temperature range, the AG502EED3HRB ensures consistent performance under diverse conditions.

Robust construction with AEC Q101 qualification for automotive applications

Low on resistance of 8.5mΩ, optimising energy efficiency

Max continuous drain current of 78A enables handling of demanding loads

Wide operating temperature range from -55°C to 175°C for reliable performance

Thermal resistance of 1.94°C/W enhances heat dissipation capabilities

100% Avalanche tested, ensuring high reliability under transient conditions

Pb free plating and compliance with RoHS standards for environmentally-friendly design

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