Vishay SI2122DS Type N-Channel Single MOSFETs, 2.17 A, 100 V Enhancement, 3-Pin PowerPAK SI2122DS-T1-GE3

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6 189,00 kr

(exkl. moms)

7 737,00 kr

(inkl. moms)

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3000 +2,063 kr6 189,00 kr

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RS-artikelnummer:
653-085
Tillv. art.nr:
SI2122DS-T1-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

2.17A

Maximum Drain Source Voltage Vds

100V

Series

SI2122DS

Package Type

PowerPAK

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.160Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

2.9nC

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

1.6W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for compact, high-efficiency switching in low-power applications. It supports up to 100 V drain-source voltage. Packaged in a SOT-23 format, it utilizes TrenchFET Gen IV technology for low RDS(on), fast switching, and efficient thermal performance in space-constrained designs.

Pb Free

Halogen free

RoHS compliant

Used in LED backlighting

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