Vishay SIRA12DDP Type N-Channel Single MOSFETs, 81 A, 30 V Enhancement, 8-Pin PowerPAK SIRA12DDP-T1-GE3

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7 068,00 kr

(exkl. moms)

8 835,00 kr

(inkl. moms)

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  • Dessutom levereras 6 000 enhet(er) från den 29 december 2025
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RS-artikelnummer:
653-144
Tillv. art.nr:
SIRA12DDP-T1-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

81A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerPAK

Series

SIRA12DDP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0036Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

9.2nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

38W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Height

1.04mm

Standards/Approvals

No

Width

6.15 mm

Length

5.15mm

Automotive Standard

No

COO (Country of Origin):
TH
The Vishay N-channel MOSFET optimized for high-efficiency switching in Compact power systems. It supports up to 30 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen IV technology to deliver ultra-low RDS(on), fast switching, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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