Vishay SISS5208DN Type N-Channel Single MOSFETs, 172 A, 20 V Enhancement, 8-Pin PowerPAK SISS5208DN-T1-GE3

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21 636,00 kr

(exkl. moms)

27 045,00 kr

(inkl. moms)

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RS-artikelnummer:
653-148
Tillv. art.nr:
SISS5208DN-T1-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

172A

Maximum Drain Source Voltage Vds

20V

Package Type

PowerPAK

Series

SISS5208DN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0013Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

7 V

Typical Gate Charge Qg @ Vgs

24.6nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

56.8W

Maximum Operating Temperature

150°C

Width

3.40 mm

Standards/Approvals

No

Height

0.83mm

Length

3.40mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 20 V drain-source voltage. Packaged in PowerPAK 1212-8S, it utilizes TrenchFET Gen V technology to deliver ultra-low RDS(on), fast switching, and excellent thermal performance.

Pb Free

Halogen free

RoHS compliant

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