Vishay SIS9122 Dual N-Channel Single MOSFETs, 7.1 A, 100 V Enhancement, 8-Pin PowerPAK SIS9122DN-T1-GE3

Se alla MOSFETs

Antal (1 rulle med 3000 enheter)*

17 454,00 kr

(exkl. moms)

21 816,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 6 000 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rulle*
3000 +5,818 kr17 454,00 kr

*vägledande pris

RS-artikelnummer:
653-097
Tillv. art.nr:
SIS9122DN-T1-GE3
Tillverkare / varumärke:
Vishay
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Vishay

Channel Type

Dual N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

7.1A

Maximum Drain Source Voltage Vds

100V

Package Type

PowerPAK

Series

SIS9122

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.16Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

3.8nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

17.8W

Maximum Operating Temperature

150°C

Height

0.8mm

Length

3.3mm

Width

3.3 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay automotive-grade dual N-channel MOSFET designed for high-efficiency switching in Compact power systems. It supports up to 100 V drain-source voltage. Packaged in PowerPAK 1212-8 Dual, it utilizes TrenchFET Gen IV technology for optimized electrical and thermal performance.

Pb Free

Halogen free

RoHS compliant

relaterade länkar