Infineon IQD0 Type N-Channel MOSFET, 151 A, 150 V Enhancement, 8-Pin PG-WHSON-8 IQD063N15NM5SCATMA1

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131,97 kr

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164,962 kr

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Enheter
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2 - 1865,985 kr131,97 kr
20 - 19859,415 kr118,83 kr
200 - 99854,71 kr109,42 kr
1000 - 199850,79 kr101,58 kr
2000 +45,585 kr91,17 kr

*vägledande pris

RS-artikelnummer:
351-914
Tillv. art.nr:
IQD063N15NM5SCATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

151A

Maximum Drain Source Voltage Vds

150V

Package Type

PG-WHSON-8

Series

IQD0

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.32mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

48nC

Maximum Power Dissipation Pd

333W

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, JEDEC, Halogen‐Free According to IEC61249‐2‐21

Height

0.75mm

Width

6 mm

Length

5mm

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon Power MOSFET comes with a low RDS(on) of 6,32 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the over molded package. This enables higher system efficiency and power density for a large variety of end applications.

Cutting edge 150 V silicon technology

Outstanding FOMs

Improved thermal performance

Ultra-low parasitic

Maximized chip or package ratio

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