Infineon OptiMOS 5 Type N-Channel MOSFET, 789 A, 25 V Enhancement, 8-Pin PG-WHSON-8 IQDH29NE2LM5SCATMA1

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RS-artikelnummer:
348-884
Tillv. art.nr:
IQDH29NE2LM5SCATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

789A

Maximum Drain Source Voltage Vds

25V

Package Type

PG-WHSON-8

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.29mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

278W

Maximum Gate Source Voltage Vgs

±16 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon Power MOSFET comes with industry’s lowest RDS(ON) of 0.29 mOhm combined with outstanding thermal performance for easy power loss management.

Minimized conduction losses

Fast switching

Reduced voltage overshoot

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