Infineon OptiMOS 5 Type N-Channel MOSFET, 789 A, 25 V Enhancement, 8-Pin PG-WHSON-8 IQDH29NE2LM5SCATMA1

Se alla MOSFETs
För närvarande inte tillgänglig
Tyvärr, vi vet inte när detta kommer att finnas i lager igen.
RS-artikelnummer:
348-884
Tillv. art.nr:
IQDH29NE2LM5SCATMA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

789A

Maximum Drain Source Voltage Vds

25V

Series

OptiMOS 5

Package Type

PG-WHSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.29mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

278W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±16 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon Power MOSFET comes with industry’s lowest RDS(ON) of 0.29 mOhm combined with outstanding thermal performance for easy power loss management.

Minimized conduction losses

Fast switching

Reduced voltage overshoot

relaterade länkar