Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE046N08LM5SCATMA1

RS-artikelnummer:: 284-768
Tillv. art.nr:: IQE046N08LM5SCATMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE046N08LM5SCATMA1

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

135,20 kr

(exkl. moms)

169,00 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Enheter	Per enhet	Per förpackning*
5 - 45	27,04 kr	135,20 kr
50 - 95	25,692 kr	128,46 kr
100 - 495	23,812 kr	119,06 kr
500 - 995	21,884 kr	109,42 kr
1000 +	21,078 kr	105,39 kr

*vägledande pris

RS-artikelnummer:: 284-768
Tillv. art.nr:: IQE046N08LM5SCATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	99A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PG-WHSON-8
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	4.6mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	100W
	Typical Gate Charge Qg @ Vgs	19nC
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC61249-2-21, JEDEC, RoHS
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 99A
	Maximum Drain Source Voltage Vds 80V
	Package Type PG-WHSON-8
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 4.6mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 100W
	Typical Gate Charge Qg @ Vgs 19nC
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC61249-2-21, JEDEC, RoHS
	Automotive Standard No

Datasheet - IQE046N08LM5SCATMA1

The Infineon MOSFET features an OptiMOS 5 Power Transistor is designed to deliver exceptional performance and reliability in high efficiency applications. Built for synchronous rectification in switch mode power supplies, this innovative MOSFET integrates Advanced thermal management features to ensure superior heat dissipation. Leveraging a logic level N channel configuration with extremely low on resistance, it guarantees efficient operation even at elevated temperatures. This component meets stringent industry standards while offering robust avalanche protection, making it a prime choice for industrial applications requiring high current handling and environmental toughness.

Optimised for high performance switching

Low on resistance enhances energy efficiency

Robust thermal performance for longevity

Avalanche tested for reliability

Pb free lead plating meets RoHS standards

Halogen free for eco friendly compliance

Ideal for stringent industrial applications

Compact package for easy integration

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE046N08LM5SCATMA1

GRATIS leverans för online beställningar över 500,00 kr

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