Infineon IQD0 Type N-Channel MOSFET, 276 A, 100 V Enhancement, 8-Pin PG-WHSON-8 IQD020N10NM5SCATMA1

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126,67 kr

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158,338 kr

(inkl. moms)

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Enheter
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Per förpackning*
2 - 1863,335 kr126,67 kr
20 - 19857,065 kr114,13 kr
200 - 99852,585 kr105,17 kr
1000 - 199848,775 kr97,55 kr
2000 +43,735 kr87,47 kr

*vägledande pris

RS-artikelnummer:
351-912
Tillv. art.nr:
IQD020N10NM5SCATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

276A

Maximum Drain Source Voltage Vds

100V

Series

IQD0

Package Type

PG-WHSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.05mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

107nC

Maximum Power Dissipation Pd

333W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

6 mm

Standards/Approvals

IEC61249-2-21, RoHS, JEDEC

Height

0.75mm

Length

5mm

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon Power MOSFET comes with a low RDS(on) of 2,05 mOhm combined with outstanding thermal performance for easy power loss management. Moreover, with the dual-side cooling package five times more power can be dissipated compared to the over molded package. This enables higher system efficiency and power density for a large variety of end applications.

Cutting edge 100 V silicon technology

Outstanding FOMs

Improved thermal performance

Ultra-low parasitic

Maximized chip or package ratio

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