Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1

RS-artikelnummer:: 284-774
Tillv. art.nr:: IQE050N08NM5SCATMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

135,20 kr

(exkl. moms)

169,00 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Enheter	Per enhet	Per förpackning*
5 - 45	27,04 kr	135,20 kr
50 - 95	25,692 kr	128,46 kr
100 - 495	23,812 kr	119,06 kr
500 - 995	21,884 kr	109,42 kr
1000 +	21,078 kr	105,39 kr

*vägledande pris

RS-artikelnummer:: 284-774
Tillv. art.nr:: IQE050N08NM5SCATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	99A
	Maximum Drain Source Voltage Vds	80V
	Series	OptiMOS
	Package Type	PG-WHSON-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.1V
	Maximum Power Dissipation Pd	100W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	35nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC, IEC61249-2-21, RoHS
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 99A
	Maximum Drain Source Voltage Vds 80V
	Series OptiMOS
	Package Type PG-WHSON-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.1V
	Maximum Power Dissipation Pd 100W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 35nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC, IEC61249-2-21, RoHS
	Automotive Standard No

Datasheet - IQE050N08NM5SCATMA1

The Infineon MOSFET features an OptiMOS 5 Power Transistor, rated at 80V, is specifically designed to enhance the efficiency and performance of modern electronic applications. It excels in providing superior synchronous rectification, ensuring minimal energy losses and maximising overall system reliability. Thanks to its low on resistance and exceptional thermal management, this transistor is Ideal for demanding industrial applications, making it a preferred choice for engineers aiming for performance optimisation. With extensive avalanche testing and robust construction, it promises longevity in severe environments and aligns with global RoHS standards, ensuring a strong commitment to safety and sustainability.

Optimised for synchronous rectification

N channel for easy circuit integration

Low on resistance reduces heat generation

Exceptional thermal resistance prevents overheating

100% avalanche tested for reliability

Pb free lead plating for eco friendly manufacturing

Halogen free construction meets regulations

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-WHSON-8 IQE050N08NM5SCATMA1

GRATIS leverans för online beställningar över 500,00 kr

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