Infineon OptiMOS Type N-Channel MOSFET, 132 A, 60 V Enhancement, 8-Pin PG-WHSON-8 IQE030N06NM5SCATMA1
- RS-artikelnummer:
- 284-760
- Tillv. art.nr:
- IQE030N06NM5SCATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
128,86 kr
(exkl. moms)
161,075 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 100 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 25,772 kr | 128,86 kr |
| 50 - 95 | 24,484 kr | 122,42 kr |
| 100 - 495 | 22,668 kr | 113,34 kr |
| 500 - 995 | 20,876 kr | 104,38 kr |
| 1000 + | 20,092 kr | 100,46 kr |
*vägledande pris
- RS-artikelnummer:
- 284-760
- Tillv. art.nr:
- IQE030N06NM5SCATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 132A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-WHSON-8 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 100W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 132A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-WHSON-8 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 100W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
The Infineon MOSFET features an optimos 5 power transistor is designed to excel in synchronous rectification applications, offering unparalleled performance and efficiency. With a robust design and state of the ART thermal management capabilities, this power MOSFET ensures reliable operation in demanding environments. Its superior thermal resistance makes it a prime choice for various industrial applications, ensuring that your systems operate with maximum reliability and minimal power loss. Fully compliant with RoHS regulations, this component prioritises eco friendliness while maintaining exceptional functionality.
High efficiency synchronous rectification
N channel configuration for effective performance
100% avalanche reliability tested
Halogen free materials for safer disposal
Wide industrial temperature range support
Minimal on state resistance reduces power loss
RoHS compliant for environmental sustainability
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