Infineon IPF Type N-Channel Power Transistor, 250 A, 135 V Enhancement, 7-Pin PG-TO263-7 IPF021N13NM6ATMA1
- RS-artikelnummer:
- 349-404
- Tillv. art.nr:
- IPF021N13NM6ATMA1
- Tillverkare / varumärke:
- Infineon
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91,13 kr
(exkl. moms)
113,91 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 91,13 kr |
| 10 - 99 | 81,87 kr |
| 100 - 499 | 75,60 kr |
| 500 - 999 | 70,11 kr |
| 1000 + | 62,83 kr |
*vägledande pris
- RS-artikelnummer:
- 349-404
- Tillv. art.nr:
- IPF021N13NM6ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 250A | |
| Maximum Drain Source Voltage Vds | 135V | |
| Package Type | PG-TO263-7 | |
| Series | IPF | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 2.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 395W | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 160nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, MSL1 J-STD-020, RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 250A | ||
Maximum Drain Source Voltage Vds 135V | ||
Package Type PG-TO263-7 | ||
Series IPF | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 2.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 395W | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 160nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, MSL1 J-STD-020, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving overall efficiency. With an excellent gate charge x RDS(on) product (FOM), it offers superior switching performance. The device also has very low reverse recovery charge (Qrr), ensuring efficient operation.
Optimized for motor drives and battery powered applications
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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