Infineon IPF Type N-Channel Power Transistor, 87 A, 200 V Enhancement, 7-Pin PG-TO263-7 IPF129N20NM6ATMA1
- RS-artikelnummer:
- 349-408
- Tillv. art.nr:
- IPF129N20NM6ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
130,01 kr
(exkl. moms)
162,512 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 1 000 enhet(er) från den 01 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 65,005 kr | 130,01 kr |
| 20 - 198 | 58,465 kr | 116,93 kr |
| 200 - 998 | 53,985 kr | 107,97 kr |
| 1000 - 1998 | 50,065 kr | 100,13 kr |
| 2000 + | 44,855 kr | 89,71 kr |
*vägledande pris
- RS-artikelnummer:
- 349-408
- Tillv. art.nr:
- IPF129N20NM6ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | Power Transistor | |
| Maximum Continuous Drain Current Id | 87A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | PG-TO263-7 | |
| Series | IPF | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 12.9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 234W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC61249-2-21, JEDEC for Industrial Applications, J-STD-020, RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type Power Transistor | ||
Maximum Continuous Drain Current Id 87A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type PG-TO263-7 | ||
Series IPF | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 12.9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 234W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC61249-2-21, JEDEC for Industrial Applications, J-STD-020, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), reducing conduction losses and improving overall efficiency. With an excellent gate charge x RDS(on) product (FOM), it offers superior switching performance. The device also has very low reverse recovery charge (Qrr), ensuring efficient operation.
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
relaterade länkar
- Infineon IPF Type N-Channel Power Transistor 200 V Enhancement, 7-Pin PG-TO263-7 IPF067N20NM6ATMA1
- Infineon IPF Type N-Channel Power Transistor 135 V Enhancement, 7-Pin PG-TO263-7 IPF031N13NM6ATMA1
- Infineon IPF Type N-Channel Power Transistor 120 V Enhancement, 7-Pin PG-TO263-7 IPF019N12NM6ATMA1
- Infineon IPF Type N-Channel Power Transistor 135 V Enhancement, 7-Pin PG-TO263-7 IPF021N13NM6ATMA1
- Infineon IMBG120R350M1HXTMA1 IGBT Transistor Module PG-TO263-7
- Infineon AIK 1 Type N-Channel MOSFET 7-Pin PG-TO263-7 AIKBE50N65RF5ATMA1
- Infineon CoolSiC Type N-Channel MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R020M2HXTMA1
- Infineon IMBG65 Type N-Channel MOSFET 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R009M1HXTMA1