Infineon IMBG65 Type N-Channel MOSFET, 170 A, 650 V Enhancement, 7-Pin PG-TO263-7 IMBG65R009M1HXTMA1
- RS-artikelnummer:
- 351-987
- Tillv. art.nr:
- IMBG65R009M1HXTMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 enhet)*
490,05 kr
(exkl. moms)
612,56 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 1 000 enhet(er), redo att levereras
Enheter | Per enhet |
|---|---|
| 1 - 9 | 490,05 kr |
| 10 - 99 | 441,06 kr |
| 100 + | 406,78 kr |
*vägledande pris
- RS-artikelnummer:
- 351-987
- Tillv. art.nr:
- IMBG65R009M1HXTMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 170A | |
| Output Power | 555W | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | IMBG65 | |
| Package Type | PG-TO263-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.5mm | |
| Width | 9.45 mm | |
| Length | 10.2mm | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 170A | ||
Output Power 555W | ||
Maximum Drain Source Voltage Vds 650V | ||
Series IMBG65 | ||
Package Type PG-TO263-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.5mm | ||
Width 9.45 mm | ||
Length 10.2mm | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
The Infineon CoolSiC is built over the solid silicon carbide technology. Leveraging the wide bandgap SiC material characteristics, it offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Optimized switching behaviour at higher currents
Commutation robust fast body diode with low Qfr
Superior gate oxide reliability
Increased avalanche capability
Compatible with standard drivers
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