Infineon IPA Type N-Channel MOSFET, 48 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPAN60R180CM8XKSA1
- RS-artikelnummer:
- 348-987
- Tillv. art.nr:
- IPAN60R180CM8XKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
107,17 kr
(exkl. moms)
133,96 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- 495 enhet(er) levereras från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 45 | 21,434 kr | 107,17 kr |
| 50 - 95 | 20,34 kr | 101,70 kr |
| 100 - 495 | 18,86 kr | 94,30 kr |
| 500 - 995 | 17,36 kr | 86,80 kr |
| 1000 + | 16,732 kr | 83,66 kr |
*vägledande pris
- RS-artikelnummer:
- 348-987
- Tillv. art.nr:
- IPAN60R180CM8XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IPA | |
| Package Type | PG-TO220-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IPA | ||
Package Type PG-TO220-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode (CFD) for all products with outstanding robustness against hard commutation and excellent ESD capability.
Significant reduction of switching and conduction losses
Simplified thermal management thanks to our advanced die attach technique
Suitable for a wide variety of applications and power ranges
relaterade länkar
- Infineon IPP Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R037CM8XKSA1
- Infineon IPP Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R016CM8XKSA1
- Infineon IPP Type N-Channel Power Transistor 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R180CM8XKSA1
- Infineon OptiMOSa5 Type N-Channel MOSFET 100 V Enhancement, 3-Pin PG-TO220-3
- Infineon IPP Type N-Channel MOSFET 700 V Enhancement, 3-Pin PG-TO220-3
- Infineon IPP65R190CFD7A Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO220-3
- Infineon OptiMOSa5 Type N-Channel MOSFET 100 V Enhancement, 3-Pin PG-TO220-3 IPP039N10N5AKSA1
- Infineon IPP Type N-Channel MOSFET 700 V Enhancement, 3-Pin PG-TO220-3 IPP65R060CFD7XKSA1