Infineon IPP Type N-Channel Power Transistor, 19 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R180CM8XKSA1

RS-artikelnummer:: 349-003
Tillv. art.nr:: IPP60R180CM8XKSA1
Tillverkare / varumärke:: Infineon

Infineon IPP Type N-Channel Power Transistor, 19 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R180CM8XKSA1

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

107,17 kr

(exkl. moms)

133,96 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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470 enhet(er) är redo att levereras

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Enheter	Per enhet	Per förpackning*
5 - 45	21,434 kr	107,17 kr
50 - 95	20,34 kr	101,70 kr
100 - 495	18,86 kr	94,30 kr
500 - 995	17,36 kr	86,80 kr
1000 +	16,732 kr	83,66 kr

*vägledande pris

RS-artikelnummer:: 349-003
Tillv. art.nr:: IPP60R180CM8XKSA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	Power Transistor
	Channel Type	Type N
	Maximum Continuous Drain Current Id	19A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PG-TO220-3
	Series	IPP
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	180mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	17nC
	Maximum Power Dissipation Pd	142W
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type Power Transistor
	Channel Type Type N
	Maximum Continuous Drain Current Id 19A
	Maximum Drain Source Voltage Vds 600V
	Package Type PG-TO220-3
	Series IPP
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 180mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 17nC
	Maximum Power Dissipation Pd 142W
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC
	Automotive Standard No

Datasheet - IPP60R180CM8XKSA1

COO (Country of Origin):: MY

The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.

Suitable for hard and soft switching topologies

Ease of use and fast design in through low ringing tendency

Simplified thermal management thanks to our advanced die attach technique

Suitable for a wide variety of applications and power ranges

Increased power density solutions enabled by using products with smaller footprint

Infineon IPP Type N-Channel Power Transistor, 19 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R180CM8XKSA1

GRATIS leverans för online beställningar över 500,00 kr

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