Infineon IPP Type N-Channel MOSFET, 135 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R016CM8XKSA1
- RS-artikelnummer:
- 349-000
- Tillv. art.nr:
- IPP60R016CM8XKSA1
- Tillverkare / varumärke:
- Infineon
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152,74 kr
(exkl. moms)
190,92 kr
(inkl. moms)
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- Dessutom levereras 500 enhet(er) från den 29 december 2025
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 152,74 kr |
| 10 - 99 | 137,54 kr |
| 100 + | 126,67 kr |
*vägledande pris
- RS-artikelnummer:
- 349-000
- Tillv. art.nr:
- IPP60R016CM8XKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 135A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-TO220-3 | |
| Series | IPP | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 16mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 625W | |
| Typical Gate Charge Qg @ Vgs | 171nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC, RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 135A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-TO220-3 | ||
Series IPP | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 16mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 625W | ||
Typical Gate Charge Qg @ Vgs 171nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolMOS 8th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction(SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS CM8 series is the successor to the CoolMOS 7. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g low ringing tendency, implemented fast body diode for all products with outstanding robustness against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses of CM8, make switching applications even more efficient.
Suitable for hard and soft switching topologies
Ease of use and fast design in through low ringing tendency
Simplified thermal management thanks to our advanced die attach technique
Suitable for a wide variety of applications and power ranges
Increased power density solutions enabled by using products with smaller footprint
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