Infineon IPP Type N-Channel MOSFET, 36.23 A, 700 V Enhancement, 3-Pin PG-TO220-3 IPP65R060CFD7XKSA1

Se alla MOSFETs

Antal (1 rör med 50 enheter)*

1 747,20 kr

(exkl. moms)

2 184,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • Dessutom levereras 400 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per Rør*
50 +34,944 kr1 747,20 kr

*vägledande pris

RS-artikelnummer:
273-3019
Tillv. art.nr:
IPP65R060CFD7XKSA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

36.23A

Maximum Drain Source Voltage Vds

700V

Series

IPP

Package Type

PG-TO220-3

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

68nC

Maximum Power Dissipation Pd

171W

Forward Voltage Vf

1V

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC, RoHS

The Infineon 650V cool MOS CFD7 super junction MOSFET in a TO-220 package is ideally suited for resonant topologies in industrial applications, such as server, telecom, solar and EV charging stations, in which it enables significant efficiency improvement

Excellent hard-commutation ruggedness

Extra safety margin for designs with increased bus voltage

Enabling increased power density

relaterade länkar