Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE046N08LM5CGSCATMA1

RS-artikelnummer:: 284-765
Tillv. art.nr:: IQE046N08LM5CGSCATMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE046N08LM5CGSCATMA1

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

135,20 kr

(exkl. moms)

169,00 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Enheter	Per enhet	Per förpackning*
5 - 45	27,04 kr	135,20 kr
50 - 95	25,692 kr	128,46 kr
100 - 495	23,812 kr	119,06 kr
500 - 995	21,884 kr	109,42 kr
1000 +	21,078 kr	105,39 kr

*vägledande pris

RS-artikelnummer:: 284-765
Tillv. art.nr:: IQE046N08LM5CGSCATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	99A
	Maximum Drain Source Voltage Vds	80V
	Package Type	PG-WHTFN-9
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	4.6mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	19nC
	Maximum Power Dissipation Pd	100W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC, IEC61249-2-21, RoHS
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 99A
	Maximum Drain Source Voltage Vds 80V
	Package Type PG-WHTFN-9
	Series OptiMOS
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 4.6mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 19nC
	Maximum Power Dissipation Pd 100W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC, IEC61249-2-21, RoHS
	Automotive Standard No

Datasheet - IQE046N08LM5CGSCATMA1

The Infineon MOSFET features an OptiMOS 5 Power Transistor delivers high efficiency and reliability tailored for demanding applications. With a focus on optimised performance in switch mode power supplies, this N channel MOSFET excels in synchronous rectification tasks. Engineered with Advanced thermal characteristics, it ensures superior heat dissipation alongside ultra low on resistance, enabling effective operation even under strict electrical demands. The component stands out for its extensive validation under JEDEC standards for industrial applications, ensuring peace of mind for professional users. Ideal for industrial power circuits, the transistor incorporates a robust avalanche rating, ensuring resilience during high stress scenarios, making it a smart choice for tomorrow's power management systems.

Optimised for high performance SMPS

Logic level control for low voltage systems

100% avalanche tested for reliability

Halogen free design for environmental responsibility

Pb free lead plating for modern standards

RoHS compliant for safe usage

Superior thermal resistance for durability

Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 9-Pin PG-WHTFN-9 IQE046N08LM5CGSCATMA1

GRATIS leverans för online beställningar över 500,00 kr

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