Infineon 2 Typ P, Typ N Kanal Isolerad, MOSFET, 3.5 A 30 V Förbättring, 8 Ben, SOIC, HEXFET

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RS-artikelnummer:
827-3934
Tillv. art.nr:
IRF9952TRPBF
Tillverkare / varumärke:
Infineon
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Infineon

Kanaltyp

Typ P, Typ N

Produkttyp

MOSFET

Maximal kontinuerlig dräneringsström Id

3.5A

Maximal källspänning för dränering Vds

30V

Serie

HEXFET

Kapseltyp

SOIC

Typ av fäste

Yta

Antal ben

8

Maximal drain-källresistans Rds

400mΩ

Kanalläge

Förbättring

Framåtriktad spänning Vf

0.82V

Typisk grindladdning Qg @ Vgs

6.1nC

Minsta arbetsstemperatur

-55°C

Maximal effektförlust Pd

2W

Transistorkonfiguration

Isolerad

Maximal arbetstemperatur

150°C

Höjd

1.5mm

Standarder/godkännanden

No

Längd

5mm

Antal element per chip

2

Fordonsstandard

Nej

Infineon HEXFET Series MOSFET, 2.3A/3.5A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF9952TRPBF


This versatile MOSFET delivers high performance in a compact package, integrating both N-channel and P-channel configurations. It is designed for effective operation in various electronic applications, ensuring efficiency and dependability. With a maximum drain current of 3.5A and a maximum drain-source voltage of 30V, it is suitable for applications that require robust switching capabilities.

Features & Benefits


• Dual-channel configuration enhances design flexibility

• Surface mount design simplifies PCB assembly

• Low resistance (150mΩ and 400mΩ) reduces power loss

• High temperature operation (+150°C) ensures reliability in extreme conditions

• Improved gate charge characteristics enhance switching efficiency

• Isolated transistor configuration minimises cross-talk for cleaner signals

Applications


• Power management solutions

• Electric vehicle systems for improved efficiency

• Industrial automation and control

• Renewable energy systems for optimal performance

• Consumer electronics for enhanced device performance

How does the isolation of this device benefit my application?


The isolated configuration minimises interference among circuits, ensuring clean signals and preventing unwanted interactions between components.

What temperature range can this device handle during operation?


It can operate within a temperature range of -55°C to +150°C, making it suitable for extreme conditions.

Can I use this product in my surface mount PCB design?


Yes, its surface mount design allows for easy integration into PCB layouts, optimising space and enhancing thermal performance.

What factors should I consider when using this for switching applications?


Ensure the maximum gate-source voltage of ±20V is not exceeded and verify that the gate charge aligns with your switching frequency for optimal performance.

How do the specifications affect my power efficiency?


With low on-resistance and high continuous drain current, this MOSFET contributes to minimal power loss, enhancing overall energy efficiency in your circuit designs.

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