Infineon IKB10N60TATMA1 Single Collector, Single Emitter, Single Gate IGBT, 30 A 600 V TO-263-3

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6 892,00 kr

(exkl. moms)

8 615,00 kr

(inkl. moms)

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1000 +6,892 kr6 892,00 kr

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RS-artikelnummer:
258-7063
Tillv. art.nr:
IKB10N60TATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

30 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

110 W

Number of Transistors

1

Configuration

Single Collector, Single Emitter, Single Gate

Package Type

TO-263-3

The Infineon IGBT discrete with anti parallel diode in TO-263 package. It has significant improvement of static as well as dynamic performance of the device, due to combination of trench cell and field stop concept. It has low conduction and switching losses also.

Lowest VCEsat drop for lower conduction losses
Easy parallel switching capability due to positive temperature coefficient in VCEsat
Very soft, fast recovery antiparallel emitter controlled diode
High ruggedness, temperature stable behaviour
Low gate charg

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