Vishay SIHG47N60EF-GE3 IGBT

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Antal (1 rör med 25 enheter)*

1 682,125 kr

(exkl. moms)

2 102,65 kr

(inkl. moms)

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25 - 2567,285 kr1 682,13 kr
50 - 10060,556 kr1 513,90 kr
125 +53,827 kr1 345,68 kr

*vägledande pris

RS-artikelnummer:
180-7344
Tillv. art.nr:
SIHG47N60EF-GE3
Tillverkare / varumärke:
Vishay
COO (Country of Origin):
CN

Vishay MOSFET


The Vishay through-hole N-channel TO-247AC-3 MOSFET is a new age product with a drain-source voltage of 600V and a maximum gate-source voltage of 30V. It has a drain-source resistance of 65mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 379W and continuous drain current of 47A. It has a drive voltage of 10V. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Fast body diode MOSFET using E series technology
• Halogen free
• Increased robustness due to low Qrr
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Operating temperature ranges between -55°C and 150°C
• Reduced trr, Qrr and IRRM
• Ultra low gate charge (Qg)

Applications


• Light emitting diodes (LEDs)
• 3-level inverters
• AC/DC bridges
• ATX power supplies
• High-intensity lighting (HID)
• LLC
• Phase shifted bridges (ZVS)
• Power factor correction power supplies (PFC)
• Server and telecom power supplies
• Solar PV inverters

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• UIS tested

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