Vishay, IGBT, Typ N Kanal, 3 Ben, TO-263 Yta

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RS-artikelnummer:
180-7419
Tillv. art.nr:
SUM70060E-GE3
Tillverkare / varumärke:
Vishay
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Varumärke

Vishay

Produkttyp

IGBT

Maximal effektförlust Pd

375W

Kapseltyp

TO-263

Fästetyp

Yta

Kanaltyp

Typ N

Antal ben

3

Minsta arbetsstemperatur

-55°C

Maximal spänning för gate-emitter VGEO

20 V

Maximal arbetstemperatur

175°C

Standarder/godkännanden

RoHS

Längd

15.875mm

Serie

ThunderFET

Bredd

10.414 mm

Energimärkning

125mJ

Fordonsstandard

Nej

COO (ursprungsland):
CN

Vishay MOSFET


The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 100V and maximum gate-source voltage of 20V. It has a drain-source resistance of 5.6mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 375W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Halogen and lead (Pb) free component

• Operating temperature ranges between -55°C and 175°C

• TrenchFET power MOSFET

Applications


• AC/DC switch-mode power supplies

• Battery management

• DC/AC inverters

• DC/DC converters

• Lighting

• Motor drive switches

• Synchronous rectifier

• Uninterruptible power supplies

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