IXYS MIXA225PF1200TSF Dual IGBT Module, 360 A 1200 V, 11-Pin SimBus F, PCB Mount

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Antal (1 låda med 3 enheter)*

4 274,091 kr

(exkl. moms)

5 342,613 kr

(inkl. moms)

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3 +1 424,697 kr4 274,09 kr

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RS-artikelnummer:
168-4565
Tillv. art.nr:
MIXA225PF1200TSF
Tillverkare / varumärke:
IXYS
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Brand

IXYS

Maximum Continuous Collector Current

360 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±30V

Maximum Power Dissipation

1100 W

Configuration

Dual

Package Type

SimBus F

Mounting Type

PCB Mount

Channel Type

N

Pin Count

11

Transistor Configuration

Series

Dimensions

152 x 62 x 17mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+150 °C

COO (Country of Origin):
DE

IGBT Modules, IXYS



IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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