Infineon HEXFET Type N-Channel MOSFET, 29 A, 55 V Enhancement, 3-Pin TO-220

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387,05 kr

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483,80 kr

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RS-artikelnummer:
919-4766
Tillv. art.nr:
IRFZ34NPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

34nC

Maximum Power Dissipation Pd

68W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.6V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

4.4 mm

Standards/Approvals

No

Length

10.54mm

Height

8.77mm

Automotive Standard

No

COO (Country of Origin):
CN

Infineon HEXFET Series MOSFET, 29A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRFZ34NPBF


This MOSFET is tailored for advanced electronic applications, particularly where high efficiency and dependability are essential. Its N-channel configuration facilitates efficient switching and modulation of electrical currents in power systems. With a maximum drain-source voltage of 55V and a continuous drain current of 29A, this component is crucial for high-performance designs in the automation and electrical sectors.

Features & Benefits


• Ultra-low on-resistance for minimal power loss

• Maximum power dissipation of 68W for robust functionality

• High-temperature tolerance of up to 175°C ensures long-term performance

• Compatible with through-hole mounting for easy integration

• Dynamic dv/dt rating allows for fast switching applications

• Enhancement mode transistor improves device efficiency

Applications


• Utilised in power supply designs for effective energy management

• Employed in motor control for accurate speed regulation

• Suitable for discrete switching in consumer electronics

• Applied in industrial automation to enhance system dependability

• Appropriate for automotive requiring high power handling

What is the maximum continuous drain current at 100°C?


At 100°C, the continuous drain current is rated at 20A, ensuring dependability in high-temperature conditions.

How does the low on-resistance benefit circuit efficiency?


A low RDS(on) decreases power losses during operation, which increases overall circuit efficiency and minimises heat generation.

Can it be used for parallel configurations?


Yes, the design accommodates easy paralleling, enhancing current handling for high-power applications.

What are the implications of the maximum gate-source voltage?


The maximum gate-source voltage of ±20V ensures safe operation and protects against damage during standard switching activities.

What is the impact of temperature on performance?


With an operating temperature range from -55°C to +175°C, it maintains operational integrity in extreme conditions, making it suitable for a variety of applications.

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