Infineon HEXFET Type N-Channel MOSFET, 47 A, 55 V Enhancement, 3-Pin TO-220

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RS-artikelnummer:
919-4814
Tillv. art.nr:
IRLZ44NPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

47A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

48nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

110W

Maximum Operating Temperature

175°C

Length

10.54mm

Width

4.69 mm

Height

8.77mm

Standards/Approvals

No

Automotive Standard

No

Infineon HEXFET Series MOSFET, 47A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRLZ44NPBF


This high-performance N-channel MOSFET from Infineon is designed for efficient switching and substantial power handling in electronic systems. Utilising advanced HEXFET technology, it caters to various semiconductor applications, making it suitable for professionals in automation, electronics, and electrical engineering seeking robust performance in power management.

Features & Benefits


• Supports continuous drain current up to 47A for effective power delivery

• Operates at a drain-source voltage of 55V, enhancing application versatility

• Maximum power dissipation of 110W optimises thermal management

• Enhancement mode design ensures effective switching and control

• Low gate threshold voltage range of 1V to 2V facilitates control with minimal drive voltage

• High current handling with a low on-resistance of 22mΩ improves efficiency

Applications


• Power supply circuits requiring efficient load switching

• DC-DC converters in renewable energy systems

• Automotive demanding high performance

• Motor control systems for enhanced operational efficiency

• Lighting systems requiring precise power regulation

What is the operating temperature range of the device?


The device functions effectively within a temperature range of -55°C to +175°C, ensuring reliability in various environmental conditions.

How should this be mounted for optimal performance?


It is designed for through-hole mounting in a TO-220AB package, enabling effective heat dissipation during operation.

Can it be used with other power management components?


Yes, it is compatible with a range of power management and switching components, fitting seamlessly into various circuit designs.

What are the implications of the gate threshold voltage range?


A gate threshold voltage of 1V to 2V allows for easy driving with standard signal levels, simplifying circuit designs and enhancing compatibility.

Is it suitable for high-frequency applications?


With a low gate charge of 48nC at 5V, it supports high-frequency switching applications, contributing to overall efficiency in power systems.

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