Vishay Isolated TrenchFET 2 Type N-Channel Power MOSFET, 20 A, 40 V Enhancement, 8-Pin SO-8

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Antal (1 rulle med 3000 enheter)*

15 132,00 kr

(exkl. moms)

18 915,00 kr

(inkl. moms)

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3000 +5,044 kr15 132,00 kr

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RS-artikelnummer:
919-4334
Tillv. art.nr:
SI7288DP-T1-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

40V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

10nC

Minimum Operating Temperature

150°C

Maximum Power Dissipation Pd

15.6W

Maximum Gate Source Voltage Vgs

20 V

Transistor Configuration

Isolated

Maximum Operating Temperature

-55°C

Height

1.07mm

Standards/Approvals

No

Length

5.99mm

Width

5 mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
CN

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