Vishay TrenchFET Type P-Channel MOSFET, 23 A, 30 V Enhancement, 8-Pin PowerPAK 1212

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Antal (1 rulle med 3000 enheter)*

9 843,00 kr

(exkl. moms)

12 303,00 kr

(inkl. moms)

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3000 +3,281 kr9 843,00 kr

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RS-artikelnummer:
919-4299
Tillv. art.nr:
SISS27DN-T1-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

23A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

PowerPAK 1212

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

57W

Typical Gate Charge Qg @ Vgs

92nC

Forward Voltage Vf

-1.2V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

3.3 mm

Length

3.3mm

Height

0.78mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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