Vishay Isolated TrenchFET 2 Type P-Channel MOSFET, 3.1 A, 60 V Enhancement, 8-Pin SOIC

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Antal (1 rulle med 2500 enheter)*

13 507,50 kr

(exkl. moms)

16 885,00 kr

(inkl. moms)

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2500 +5,403 kr13 507,50 kr

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RS-artikelnummer:
919-4198
Tillv. art.nr:
SI4948BEY-T1-GE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.1A

Maximum Drain Source Voltage Vds

60V

Series

TrenchFET

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

150mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

14.5nC

Forward Voltage Vf

-0.8V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

2.4W

Maximum Gate Source Voltage Vgs

20 V

Transistor Configuration

Isolated

Maximum Operating Temperature

175°C

Length

5mm

Width

4 mm

Standards/Approvals

No

Height

1.5mm

Number of Elements per Chip

2

Automotive Standard

No

COO (Country of Origin):
TW

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