Infineon SIPMOS Type N-Channel MOSFET, 660 mA, 200 V Enhancement, 4-Pin SOT-223

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RS-artikelnummer:
911-0929
Tillv. art.nr:
BSP297H6327XTSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

660mA

Maximum Drain Source Voltage Vds

200V

Package Type

SOT-223

Series

SIPMOS

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

1.8Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.8W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

12.9nC

Forward Voltage Vf

0.84V

Maximum Operating Temperature

150°C

Length

6.5mm

Standards/Approvals

No

Width

3.5 mm

Height

1.6mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

Infineon SIPMOS® Series MOSFET, 660mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP297H6327XTSA1


This MOSFET is engineered for efficient switching performance in diverse electronic applications. With a maximum continuous drain current of 660mA and a breakdown voltage of 200V, it is suitable for use in various environments. Its surface mount design simplifies integration into automated systems, making it applicable in both electronic and automotive sectors.

Features & Benefits


• N-channel configuration improves switching efficiency

• Low gate threshold voltage ensures compatibility with logic levels

• High voltage ratings accommodate a range of applications

• Enhanced power dissipation capabilities support effective thermal management

• AEC-Q101 qualification adheres to automotive industry standards

• Compact SOT-223 package supports space-efficient designs

Applications


• Utilised for motor control in automotive systems

• Applied in power management for consumer electronics

• Used in battery management systems for energy regulation

• Employed in signal amplification within communication devices

• Ideal for switch-mode power supplies that improve efficiency

What is the maximum operating temperature for optimal performance?


The component can operate effectively at temperatures up to +150°C, ensuring stability in high-temperature conditions.

How should the MOSFET be installed for best results?


Utilise surface mount technology for installation on a compatible PCB, ensuring correct soldering to maintain connection integrity.

What type of materials is this MOSFET made from?


It is constructed from silicon (Si), which contributes to its performance and reliability across various uses.

Can it withstand severe voltage conditions during operation?


Yes, it has a maximum drain-source breakdown voltage of 200V, making it suitable for high-voltage applications.

How does the gate charge affect its performance?


The typical total gate charge is 12.9nC at 10V, ensuring fast switching times and enhanced circuit efficiency.

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