Infineon HEXFET Type N-Channel MOSFET, 33 A, 100 V Enhancement, 3-Pin TO-262
- RS-artikelnummer:
- 907-5028
- Tillv. art.nr:
- IRF540NLPBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
159,20 kr
(exkl. moms)
199,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 20 enhet(er) från den 19 januari 2026
- Dessutom levereras 650 enhet(er) från den 26 januari 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 15,92 kr | 159,20 kr |
| 100 - 240 | 15,12 kr | 151,20 kr |
| 250 - 490 | 14,47 kr | 144,70 kr |
| 500 - 990 | 13,854 kr | 138,54 kr |
| 1000 + | 12,88 kr | 128,80 kr |
*vägledande pris
- RS-artikelnummer:
- 907-5028
- Tillv. art.nr:
- IRF540NLPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 33A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-262 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 44mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 71nC | |
| Maximum Power Dissipation Pd | 130W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 9.65mm | |
| Length | 10.67mm | |
| Width | 4.83 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 33A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-262 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 44mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 71nC | ||
Maximum Power Dissipation Pd 130W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 9.65mm | ||
Length 10.67mm | ||
Width 4.83 mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 100V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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