Toshiba Single 2SK 1 Type N-Channel MOSFET, 5 A, 900 V Enhancement, 3-Pin SC-67 2SK3565,S5Q(J
- RS-artikelnummer:
- 890-2695
- Tillv. art.nr:
- 2SK3565,S5Q(J
- Tillverkare / varumärke:
- Toshiba
Mängdrabatt möjlig
Antal (1 förpackning med 5 enheter)*
96,88 kr
(exkl. moms)
121,10 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 30 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 5 - 20 | 19,376 kr | 96,88 kr |
| 25 - 45 | 18,996 kr | 94,98 kr |
| 50 - 95 | 18,636 kr | 93,18 kr |
| 100 - 245 | 18,234 kr | 91,17 kr |
| 250 + | 17,876 kr | 89,38 kr |
*vägledande pris
- RS-artikelnummer:
- 890-2695
- Tillv. art.nr:
- 2SK3565,S5Q(J
- Tillverkare / varumärke:
- Toshiba
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Series | 2SK | |
| Package Type | SC-67 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 45W | |
| Forward Voltage Vf | -1.7V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 4.5 mm | |
| Height | 15mm | |
| Length | 10mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 900V | ||
Series 2SK | ||
Package Type SC-67 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 45W | ||
Forward Voltage Vf -1.7V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 4.5 mm | ||
Height 15mm | ||
Length 10mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
relaterade länkar
- Toshiba Single 2SK 1 Type N-Channel MOSFET 900 V EnhancementS5Q(J
- Toshiba Single 2SK 1 Type N-Channel MOSFET 800 V EnhancementS5Q(J
- Toshiba Type N-Channel MOSFET 500 V EnhancementS5Q(J
- Toshiba 2SK N-Channel MOSFET 60 V, 3-Pin PW Mold2 2SK4017(Q)
- Toshiba 2SK Type N-Channel MOSFET 20 V EnhancementF)
- Toshiba TK Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-3PN
- Toshiba TK Type N-Channel MOSFET 900 V Enhancement, 3-Pin TO-3PN TK9J90E
- Toshiba Type N-Channel MOSFET 30 V EnhancementLF(T
