Infineon HEXFET Type P-Channel MOSFET, 13 A, 100 V Enhancement, 3-Pin TO-252 IRFR5410TRPBF

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Förpackningsalternativ:
RS-artikelnummer:
827-4079
Distrelec artikelnummer:
304-44-465
Tillv. art.nr:
IRFR5410TRPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

205mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

58nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

66W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.6V

Maximum Operating Temperature

150°C

Width

6.22 mm

Standards/Approvals

No

Length

6.73mm

Height

2.39mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel Power MOSFET 100V to 150V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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