Infineon HEXFET Type P-Channel MOSFET, 18 A, 55 V Enhancement, 3-Pin TO-252
- RS-artikelnummer:
- 913-4783
- Tillv. art.nr:
- IRFR5505TRPBF
- Tillverkare / varumärke:
- Infineon
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Antal (1 rulle med 2000 enheter)*
8 064,00 kr
(exkl. moms)
10 080,00 kr
(inkl. moms)
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- Dessutom levereras 4 000 enhet(er) från den 01 januari 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2000 - 2000 | 4,032 kr | 8 064,00 kr |
| 4000 + | 3,83 kr | 7 660,00 kr |
*vägledande pris
- RS-artikelnummer:
- 913-4783
- Tillv. art.nr:
- IRFR5505TRPBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 57W | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.6V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Width | 6.22 mm | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 57W | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.6V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Width 6.22 mm | ||
Height 2.39mm | ||
Automotive Standard No | ||
P-Channel Power MOSFET 40V to 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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