Fairchild UltraFET N-Channel MOSFET, 56 A, 100 V, 3-Pin TO-247 HUF75639G3
- RS-artikelnummer:
- 807-6692
- Tillv. art.nr:
- HUF75639G3
- Tillverkare / varumärke:
- Fairchild Semiconductor
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RS kommer inte längre att lagerföra denna produkt.
- RS-artikelnummer:
- 807-6692
- Tillv. art.nr:
- HUF75639G3
- Tillverkare / varumärke:
- Fairchild Semiconductor
Specifikationer
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Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Fairchild Semiconductor | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 56 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | TO-247 | |
| Series | UltraFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 25 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 200 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 4.82mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 110 nC @ 20 V | |
| Length | 15.87mm | |
| Number of Elements per Chip | 1 | |
| Height | 20.82mm | |
| Minimum Operating Temperature | -55 °C | |
| Välj alla | ||
|---|---|---|
Brand Fairchild Semiconductor | ||
Channel Type N | ||
Maximum Continuous Drain Current 56 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type TO-247 | ||
Series UltraFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 25 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 200 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Width 4.82mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 110 nC @ 20 V | ||
Length 15.87mm | ||
Number of Elements per Chip 1 | ||
Height 20.82mm | ||
Minimum Operating Temperature -55 °C | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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