Fairchild UltraFET N-Channel MOSFET, 4.5 A, 100 V, 8-Pin SOIC FDS3692

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RS-artikelnummer:
671-0501
Tillv. art.nr:
FDS3692
Tillverkare / varumärke:
Fairchild Semiconductor
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Brand

Fairchild Semiconductor

Channel Type

N

Maximum Continuous Drain Current

4.5 A

Maximum Drain Source Voltage

100 V

Series

UltraFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

11 nC @ 10 V

Length

5mm

Number of Elements per Chip

1

Transistor Material

Si

Minimum Operating Temperature

-55 °C

Height

1.5mm

COO (Country of Origin):
CN

UltraFET® MOSFET, Fairchild Semiconductor


UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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