onsemi UltraFET Type N-Channel MOSFET, 75 A, 100 V Enhancement, 3-Pin TO-247 HUF75652G3
- RS-artikelnummer:
- 807-8705
- Tillv. art.nr:
- HUF75652G3
- Tillverkare / varumärke:
- onsemi
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Antal (1 enhet)*
107,63 kr
(exkl. moms)
134,54 kr
(inkl. moms)
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- Dessutom levereras 38 enhet(er) från den 29 december 2025
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 107,63 kr |
| 10 + | 92,74 kr |
*vägledande pris
- RS-artikelnummer:
- 807-8705
- Tillv. art.nr:
- HUF75652G3
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | UltraFET | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.25V | |
| Maximum Power Dissipation Pd | 515W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 393nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Height | 20.82mm | |
| Width | 4.82 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series UltraFET | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.25V | ||
Maximum Power Dissipation Pd 515W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 393nC | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Height 20.82mm | ||
Width 4.82 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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