onsemi UltraFET Type N-Channel MOSFET, 56 A, 100 V Enhancement, 3-Pin TO-220 HUF75639P3
- RS-artikelnummer:
- 329-1013
- Tillv. art.nr:
- HUF75639P3
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 enhet)*
33,82 kr
(exkl. moms)
42,28 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 72 enhet(er) är redo att levereras
- Dessutom levereras 273 enhet(er) från den 02 januari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 9 | 33,82 kr |
| 10 + | 29,12 kr |
*vägledande pris
- RS-artikelnummer:
- 329-1013
- Tillv. art.nr:
- HUF75639P3
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | UltraFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 200W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.67mm | |
| Width | 4.83 mm | |
| Height | 9.4mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series UltraFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 200W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.67mm | ||
Width 4.83 mm | ||
Height 9.4mm | ||
Automotive Standard No | ||
Uppfyller ej RoHS
UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable Benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
relaterade länkar
- onsemi UltraFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-220
- onsemi UltraFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- onsemi UltraFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- onsemi UltraFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- onsemi UltraFET Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220
- onsemi UltraFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 HUF76423P3
- onsemi UltraFET Type N-Channel MOSFET 80 V Enhancement, 3-Pin TO-220 HUF75645P3
- onsemi UltraFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 HUF75345P3