STMicroelectronics STW Type N-Channel MOSFET, 56 A Enhancement, 3-Pin TO-247 STWA60N043DM9
- RS-artikelnummer:
- 275-1384
- Tillv. art.nr:
- STWA60N043DM9
- Tillverkare / varumärke:
- STMicroelectronics
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|---|---|
| 1 - 4 | 106,96 kr |
| 5 - 9 | 104,83 kr |
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*vägledande pris
- RS-artikelnummer:
- 275-1384
- Tillv. art.nr:
- STWA60N043DM9
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Series | STW | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 43mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 78.6nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 312W | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Series STW | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 43mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 78.6nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 312W | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel power MOSFET is based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure.
Fast recovery body diode
Worldwide best RDS per area among silicon based fast recovery devices
Low gate charge, input capacitance and resistance
100 percent avalanche tested
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