IXYS Single HiperFET, Q3-Class 1 Type N-Channel MOSFET, 82 A, 600 V Enhancement, 3-Pin PLUS264 IXFB82N60Q3
- RS-artikelnummer:
- 801-1370
- Tillv. art.nr:
- IXFB82N60Q3
- Tillverkare / varumärke:
- IXYS
Mängdrabatt möjlig
Antal (1 enhet)*
432,14 kr
(exkl. moms)
540,18 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 09 oktober 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 4 | 432,14 kr |
| 5 - 9 | 393,90 kr |
| 10 - 24 | 383,94 kr |
| 25 + | 353,02 kr |
*vägledande pris
- RS-artikelnummer:
- 801-1370
- Tillv. art.nr:
- IXFB82N60Q3
- Tillverkare / varumärke:
- IXYS
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | IXYS | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 82A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PLUS264 | |
| Series | HiperFET, Q3-Class | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.31 mm | |
| Height | 26.59mm | |
| Length | 20.29mm | |
| Number of Elements per Chip | 1 | |
| Välj alla | ||
|---|---|---|
Brand IXYS | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 82A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PLUS264 | ||
Series HiperFET, Q3-Class | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Width 5.31 mm | ||
Height 26.59mm | ||
Length 20.29mm | ||
Number of Elements per Chip 1 | ||
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
relaterade länkar
- IXYS HiperFET 82 A 3-Pin PLUS264 IXFB82N60Q3
- IXYS HiperFET 32 A 3-Pin ISOPLUS247 IXFR48N60Q3
- IXYS HiperFET 15 A 3-Pin TO-247 IXFH15N100Q3
- IXYS HiperFET 18 A 3-Pin TO-268 IXFT18N100Q3
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 3-Pin PLUS264
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 3-Pin PLUS264 IXFB90N85X
- IXYS Q3-Class Type N-Channel Power MOSFET 600 V Enhancement, 3-Pin ISOPLUS247 IXFR48N60Q3
- IXYS HiperFET 15 A 3-Pin TO-247 IXFH15N100Q3